Der ATLAS Pixelsensor: Der state-of-the art Pixelsensor für teilchenphysikalische Anwendungen mit extrem hohen Strahlungsfeldern

The innermost subdetector of the ATLAS Experiment is a hybrid pixel detector which consists of about 150 million pixel on roughly 2000 modules for a high resolution tracking and b-tagging in the LHC enviroment. The scope of this theses is the successful development of silicon pixel sensors for the ATLAS Pixel Detector. The main attention for the design was given to survivability in the harsh radiation enviroment of LHC up to a fluence 10^{15} n_{eq}/cm^2during 10 years of operation. This leads to the need of long term operation at several hundreds of volts, partially depleted while maintaining good charge collection, small cell size and thin sensors reducing multiple scattering. Additionally, a punch through bias grid for testing the sensors before assembly under realistic bias conditions is implemented to allow a quality assurance. The design of the ATLAS pixel sensor is explained in detail and the results of the prototype sensors showing the capability of the chosen sensor design to cope with the challenging requirements of an operation in the LHC enviroment are presented. Furthermore the possibility of transfering this silicon sensor design approach to biomedical or other applications is discussed

Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 10$^{15}$ n$_{eq}$ cm$^{-2}$, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path $\lambda_{e/h}$ of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 10$^{15}$ particles cm$^{-2}$, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors

HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given

Radiation-hard active pixel sensors for HL-LHC detector upgrades based on HV-CMOS technology

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

Progress in Diamond Detector Development

Detectors based on Chemical Vapor Deposition (CVD) diamond have been used successfully in Luminosity and Beam Condition Monitors (BCM) in the highest radiation areas of the LHC. Future experiments at CERN will accumulate an order of magnitude larger fluence. As a result, an enormous effort is underway to identify detector materials that can operate under fluences of 1 · 1016 n cm−2 and 1 · 1017 n cm−2. Diamond is one candidate due to its large displacement energy that enhances its radiation tolerance. Over the last 30 years the RD42 collaboration has constructed diamond detectors in CVD diamond with a planar geometry and with a 3D geometry to extend the material's radiation tolerance. The 3D cells in these detectors have a size of 50 µm×50 µm with columns of 2.6 µm in diameter and 100 µm×150 µm with columns of 4.6 µm in diameter. Here we present the latest beam test results from planar and 3D diamond pixel detectors

A study of the radiation tolerance of cvd diamond to 70 mev protons, fast neutrons and 200 mev pions

We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 10$^{15}$ protons/cm$^{2}$, (1.43±0.14) × 10$^{16}$ neutrons/cm$^{2}$, and (6.5±1.4) × 1014 pions/cm$^{2}$, respectively. By observing the charge induced due to the separation of electron–hole pairs created by the passage of the hadron beam through each sample, on an event-by-event basis, as a function of irradiation fluence, we conclude all datasets can be described by a first-order damage equation and independently calculate the damage constant for 70 MeV protons, fast reactor neutrons, and 200 MeV pions. We find the damage constant for diamond irradiated with 70 MeV protons to be 1.62±0.07(stat)±0.16(syst)× 10−18 cm$^{2}$/(pμm), the damage constant for diamond irradiated with fast reactor neutrons to be 2.65±0.13(stat)±0.18(syst)× 10−18 cm$^{2}$/(nμm), and the damage constant for diamond irradiated with 200 MeV pions to be 2.0±0.2(stat)±0.5(syst)× 10−18 cm$^{2}$/(πμm). The damage constants from this measurement were analyzed together with our previously published 24 GeV proton irradiation and 800 MeV proton irradiation damage constant data to derive the first comprehensive set of relative damage constants for Chemical Vapor Deposition diamond. We find 70 MeV protons are 2.60 ± 0.29 times more damaging than 24 GeV protons, fast reactor neutrons are 4.3 ± 0.4 times more damaging than 24 GeV protons, and 200 MeV pions are 3.2 ± 0.8 more damaging than 24 GeV protons. We also observe the measured data can be described by a universal damage curve for all proton, neutron, and pion irradiations we performed of Chemical Vapor Deposition diamond. Finally, we confirm the spatial uniformity of the collected charge increases with fluence for polycrystalline Chemical Vapor Deposition diamond, and this effect can also be described by a universal curve

Beam test results of 3D pixel detectors constructed with poly-crystalline CVD diamond

As a possible candidate for extremely radiation tolerant tracking devices we present a novel detector design - namely 3D detectors - based on poly-crystalline CVD diamond sensors with a pixel readout. The fabrication of recent 3D detectors as well their results in recent beam tests are presented. We measured the hit efficiency and signal response of two 3D diamond detectors with 50 × 50 μm cell sizes using pixel readout chip technologies currently used at CMS and ATLAS. In all runs, both devices attained efficiencies >98 % in a normal incident test beam of minimum ionising particles. The highest efficiency observed during the beam tests was 99.2 %

Design studies on sensors for the ATLAS Pixel Detector

For the ATLAS Pixel Detector, prototype sensors have been successfully developed. For the sensors design, attention was given to survivability of the harsh LHC radiation environment leading to the need to operate them at several hundreds of volts, while maintaining a good charge collection efficiency, small cell size and minimal multiple scattering. For a cost effective mass production, a bias grid is implemented to test the sensors before assembly under full bias. (6 refs)

Prototype performance and design of the ATLAS pixel sensors

Silicon pixel sensors for the ATLAS pixel detector have been successfully developed. The main attention for the design was given to survivability in the harsh radiation environment of LHC up to a fluence of 10/sup 15/n/sub eq//cm/sup 2/ during 10 years of operation. This leads to the need of long term operation at several hundreds of volts, partially depleted while maintaining good charge collection, small cell size and thin sensors reducing the multiple scattering. Additionally, a bias grid for testing the sensors before assembly under realistic bias conditions is implemented to allow a quality assurance. (14 refs)